大功率半导体激光器腔面氮钝化的研究

针对980 nm大功率半导体激光器腔面离子铣氮钝化处理工艺进行了研究,发现腔面离子铣氮钝化可以提高激光器的输出特性及COD功率,器件输出功率提高了32.14%；老化实验后,经过氮钝化的半导体激光器没有明显退化,而未经氮钝化处理的激光器退化严重；使用俄歇谱测试仪(AES)对钝化处理后的半导体激光器试验片进行测试,发现有部分的氮离子遗留在腔面处；氮元素含量由原有的0%上升到20%,与此同时,氧元素的含量由原来的61%降至30%。结果表明,该技术能够改善半导体激光器的腔面特性,器件的可靠性和使用寿命可望得到提高。

Research on nitrogen passivation for high power semiconductor lasers

The ion bombardment and nitrogen passivation treatment process in the cavity were studied for 980 nm semiconductor lasers.This two treatment processes can improve the output characteristics and COD power of 980 nm semiconductor lasers,and output power increases by 32.14%.Lasers with nitrogen passivation have no evident degradation after the aging experiment,but lasers with non-nitrogen passivation have severe degradation.The part of the nitrogen ions leaves the cavity surface after the lasers with nitrogen passivation are measured by the Auger spectroscopy analyzer(AES).The content of nitrogen increases from 0% to 20%,but the content of oxygen decreases from 61% to 30%.The results show that this process can improve the cavity surface features of semiconductor lasers,which makes the reliability and the life of the device increase.