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Raman scattering study of the phonon dispersion in twisted bilayer graphene
Authors:Jessica Campos-Delgado  Luiz G. Cançado  Carlos A. Achete  Ado Jorio  Jean-Pierre Raskin
Affiliation:1304. Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université catholique de Louvain, Louvain-la-Neuve, 1348, Belgium
2304. Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG, 30123-970, Brazil
3304. Divis?o de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO), Xerém, RJ, 25250-020, Brazil
Abstract:Bilayer graphene with a twist angle θ between the layers generates a superlattice structure known as a Moiré pattern. This superlattice provides a θ-dependent q wavevector that activates phonons in the interior of the Brillouin zone. Here we show that this superlattice-induced Raman scattering can be used to probe the phonon dispersion in twisted bilayer graphene (tBLG). The effect reported here is different from the widely studied double-resonance in graphene-related materials in many aspects, and despite the absence of stacking order in tBLG, layer breathing vibrations (namely ZO’ phonons) are observed. ></img>                                </span>                              </span></td>
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