| 高温正向栅电流下Ti/Pt/Au栅SiC MESFET的栅退化机理 |
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| 引用本文： | 崔晓英,黄云,恩云飞,陈刚,柏松.高温正向栅电流下Ti/Pt/Au栅SiC MESFET的栅退化机理[J].微电子学,2009,39(1). |
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| 作者姓名： | 崔晓英 黄云 恩云飞 陈刚 柏松 |
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| 作者单位： | 1. 工业和信息化部电子第五研究所;电子元器件可靠性物理及其应用技术国家级重点实验室,广州510610
2. 南京电子器件研究所单片集成电路和模块国家级重点实验室,南京,210016 |
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| 基金项目： | 电子元器件可靠性物理及其应用技术国家级重点实验室基金 |
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| 摘 要： | SiC MESFET器件的性能强烈依赖于栅肖特基结的特性,而栅肖特基接触的稳定性直接影响其可靠性.针对SiC MESFET器件在微波频率的应用中射频过驱动导致高栅电流密度的现象,设计了两种栅极大电流的条件,观察栅肖特基接触和器件特性的变化,并通过对试验数据的分析,确定了栅的寄生并联电阻的缓慢退化是导致栅肖特基结和器件特性退化,甚至器件烧毁失效的主要原因.
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| 关 键 词： | 肖特基结 栅退化 可靠性 |
Gate Degradation Mechanisms of Ti/Pt/Au-Gate SiC MESFET Induced by High-Temperature Forward Large-Current Density |
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| CUI Xiaoying,HUANG Yun,EN Yunfei,CHEN Gang,BAI Song.Gate Degradation Mechanisms of Ti/Pt/Au-Gate SiC MESFET Induced by High-Temperature Forward Large-Current Density[J].Microelectronics,2009,39(1). |
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| Authors: | CUI Xiaoying HUANG Yun EN Yunfei CHEN Gang BAI Song |
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| Affiliation: | 1.No.5 Res.Inst.;Ministry of Indus.and Infor.Technol.;Nat.Key Lab for Reliab.Phys.and Appl.Technol.of Electro.Prod.;Guangzhou 510610;P.R.China;2.Nat.Key Lab of Monolithic Integrated Circuits and Modules;Nanjing Electronic Devices Institute;Nanjing 210016;P.R.China |
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| Abstract: | Performances of SiC MESFET strongly depend on Schottky barrier height,and the stability of gate Schottky contact will have a further impact on the device performances.To simulate phenomena of high gate-current density resulted from RF overdrive of SiC MESFET,two kinds of high temperature forward large current test(HTFLCT) of Ti/Pt/Au-gate SiC MESFET were designed.Analysis of test data and failure samples indicated that the degeneration of parasitic shunt resistance of the gate was the main cause for degrada... |
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| Keywords: | SiC MESFET |
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