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Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes |
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| Authors: | A Y Polyakov N B Smirnov A V Govorkov Jihyun Kim F Ren G T Thaler R M Frazier B P Gila C R Abernathy S J Pearton I A Buyanova G Y Rudko W M Chen C -C Pan G -T Chen J -I Chyi J M Zavada |
| Affiliation: | (1) Institute of Rare Metals, 119017 Moscow, Russia;(2) Department of Chemical Engineering, University of Florida, 32611 Gainesville, FL;(3) Department of Materials Science and Engineering, University of Florida, USA;(4) Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden;(5) Department of Electrical Engineering, National Central University, 32054 Chung-Li, Taiwan, Republic of China;(6) United States Army Research Office, Research Triangle Park, 27709, NC |
| Abstract: | Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnetic field (so-called “spin-LEDs”). The contact annealing temperature was kept to 750°C, which is the thermal stability limit for retaining room-temperature magnetic ordering in the GaMnN layer. Measurable electroluminescence (EL) was obtained in these structures at threshold voltages of ∼15 V, with a lower EL signal compared to control LEDs without Mn. This is related to the existence of two parasitic junctions between the metal and the lower contact p-type layer and between the GaMnN and the n-GaN in the top contact layer. |
| Keywords: | GaN/InGaN light-emitting diodes (LEDs) electroluminescence (EL) |
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