Required grading length to eliminate the heterojunction spike in npn In0.52Al0.48As/In0.53Ga0.47As/InP bipolar transistors |
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| Authors: | Chand N. Morko? H. |
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| Affiliation: | University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, Urbana, USA; |
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| Abstract: | Energy-band diagrams have been studied for n-In0.52Al0.48As/p-In0.53Ga0.47As heterojunctions employing different compositional gradings for heterojunction bipolar transistor applications, and the minimum grading widths were calculated for eliminating the conduction-band spike barrier. |
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