Morphologies of silicon crystals solidified on a chill plate |
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Authors: | R P Liu D M Herlach M Vandyoussefi A L Greer |
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Affiliation: | (1) the Key Laboratory of Metastable Materials Science and Technology, Yanshan University, 066004 Qinhuangdao, Hebei, People’s Republic of China;(2) the Institute of Space Simulation, German Aerospace Center, D-51170 Koeln, Germany;(3) the Department of Materials Science and Metallurgy, University of Cambridge, CB2 3QZ Cambridge, United Kingdom |
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Abstract: | Electromagnetically levitated liquid droplets of pure Si or a Si-Ge alloy were cooled to different temperatures and then dropped
onto a chill plate of Cu. Droplet oscillations mark the solid/liquid interface during solidification and permit the different
crystal morphologies of silicon to be observed on the quenched surface by scanning electron microscopy (SEM). A spherical
morphology found on the quenched surface represents the initial stage of crystal growth. Further growth leads to octahedral
crystals bounded by {111} faces near equilibrium and to other polyhedra or even faceted dendrites further from equilibrium.
The spherical growth can be observed only when the initial melt undercooling is moderately high. The critical size at which
spherical crystals start to develop dendritic growth is much bigger than that calculated from the Mullins and Sekerka model,
and is bigger than the Coriell and Parker model when kinetic undercooling is taken into account. |
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