首页 | 本学科首页   官方微博 | 高级检索  
     

光电耦合器电离辐射损伤噪声相关性模型
引用本文:林丽艳,杜磊,包军林,何亮. 光电耦合器电离辐射损伤噪声相关性模型[J]. 电子科技, 2010, 23(3): 50-52
作者姓名:林丽艳  杜磊  包军林  何亮
作者单位:(1西安电子科技大学大学 技术物理学院,陕西 西安710071;2西安电子科技大学大学 微电子学院,陕西 西安710071)
摘    要:在总结光电耦合器噪声产生机制的基础上,建立光电耦合器电离辐射损伤1/f噪声相关性模型,并通过辐照实验验证了模型的正确性。该模型全面分析了光电耦合器的电离辐射损伤,为噪声参量用于光电耦合器电离辐射损伤表征提供了理论依据。

关 键 词:噪声  光电耦合器  模型  

A Model for Ionizing Radiation Damage Correlating with Noise in Optoelectronic Coupled Devices
Lin Liyan,Du Lei,Bao Junlin,He Liang. A Model for Ionizing Radiation Damage Correlating with Noise in Optoelectronic Coupled Devices[J]. Electronic Science and Technology, 2010, 23(3): 50-52
Authors:Lin Liyan  Du Lei  Bao Junlin  He Liang
Affiliation:(1School of Technical Physics,Xidian University,Xian  710071,China;2School of Microelectronics,Xidian University,Xian  710071,China)
Abstract:Defects generated by ionizing radiation damage in optoelectronic coupled devices(OCDs) is the origin of noise.Based on a summary of the noise mechanism in OCDs,a model of ionizing radiation damage correlating with 1/f noise in OCDs has been established.The experimental results agree well with the proposed model.The model analyzes the mechanism and provides the noise representation theory for ionizing radiation damage in OCDs.
Keywords:noise  OCDs  model  
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《电子科技》浏览原始摘要信息
点击此处可从《电子科技》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号