| 异面结构GaAs光导开关耐压特性研究 |
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| 引用本文： | 李寅鑫,苏伟,刘娟.异面结构GaAs光导开关耐压特性研究[J].传感器与微系统,2009,28(6):16-17. |
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| 作者姓名： | 李寅鑫 苏伟 刘娟 |
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| 作者单位： | 中国工程物理研究院,电子工程研究所,四川,绵阳,621900 |
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| 基金项目： | 中国工程物理研究院科学技术基金资助项目 |
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| 摘 要： | 光导开关用于产生高功率脉冲，提高光导开关的耐压能力可有效提高器件的输出功率。用SIL-VACO软件对共面和异面电极结构的GaAs光导开关进行了仿真分析，比较了两者的击穿电压，指出异面开关耐压性能优于共面开关。对设计制作的3mm间隙宽度的GaAs光导开关进行了耐压特性试验，并结合模拟结果进行分析。模拟结果和试验结果表明：和共面电极结构相比，异面结构的光导开关具有更高的耐压能力，击穿电场可达7．67kV／mm。
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| 关 键 词： | 光导开关 异面开关 SILVACO模拟 耐压特性 |
Research on withstand voltage characteristics of opposed contacts GaAs PCSS |
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| LI Yin-xin,SU Wei,LIU Juan.Research on withstand voltage characteristics of opposed contacts GaAs PCSS[J].Transducer and Microsystem Technology,2009,28(6):16-17. |
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| Authors: | LI Yin-xin SU Wei LIU Juan |
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| Affiliation: | LI Yin-xin,SU Wei,LIU Juan(Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621900,China) |
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| Abstract: | Photoconductive semiconductor switche(PCSS)is used to generate high-power pulse.Increasing the hold-off voltage of PCSS can elevate output power effectively.Simulation is carried out on both coplanar and opposed contacts GaAs PCSS by using software SILVACO.Different breakdown voltage and distribution of impact ionization rate is obtained with the help of simulation tool mentioned above.The withstand voltage experiments are done using fabricated 3 mm gap coplanar and opposed contacts GaAs PCSS.Combined with ... |
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| Keywords: | photoconductive semiconductor switch(PCSS) opposed contacts SILVACO simulation withstand voltage characteristics |
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