| ULSI制备中多层布线导体铜的抛光液与抛光技术的研究 |
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| 引用本文： | 刘玉岭,李嘉席,檀柏梅,梁存龙. ULSI制备中多层布线导体铜的抛光液与抛光技术的研究[J]. 微纳电子技术, 2000, 0(5) |
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| 作者姓名： | 刘玉岭 李嘉席 檀柏梅 梁存龙 |
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| 作者单位： | 河北工业大学!天津300130(刘玉岭，李嘉席，檀柏梅)，河北冀雅电子有限公司!石家庄050071(梁存龙) |
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| 摘 要： | 提出了在碱性浆料中 UL SI多层布线导体铜化学机械抛光的模型 ,对铜 CMP所需达到的平面化、选择性、抛光速率控制、浆料的稳定及洁净度、抛光液成分的优化选择进行了实验研究。
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| 关 键 词： | 化学机械抛光 多层布线 甚大规模集成电路 铜 浆料(抛光液) |
CMP Study of Multilayer Wiring Conductor Copper in ULSI Manufacturing |
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| Liu Yuling,Li Jiaxi,Tan Baimei. CMP Study of Multilayer Wiring Conductor Copper in ULSI Manufacturing[J]. Micronanoelectronic Technology, 2000, 0(5) |
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| Authors: | Liu Yuling Li Jiaxi Tan Baimei |
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| Abstract: | A model for copper CMP in alkaline polish slurry is introduced in the paper.A lot of study on the best choice for the components of corresponding polish slurry,the global planarization,the selective,the control of polish rate,the stability and pureness of the polish slurry required by copper CMP have been made. |
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| Keywords: | CMP Multilayer wiring ULSI Copper Slurry |
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