Diamond Schottky Contact Transit-time Diode for Terahertz Power Generation |
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| Authors: | Tao Wu |
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| Affiliation: | 1. State Key Laboratory of Millimeter Waves, Southeast University of China, Si Pai Lou 2#, 210096, Nanjing, People’s Republic of China
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| Abstract: | A diamond mixed tunneling and avalanche transit-time diode is designed in this letter. Schottky contact is used in this kind of diode to reduce the contact resistance. Electrical characteristics of n-type diamond Schottky contact have been accurately investigated. Total output power of such transit-time diode is evaluated using an accurate large-signal model. The results indicate that the new type transit-time diode can operate with the frequency up to several terahertzes. The output power density is more than 1.185 MW/cm2 from 1.07 to 2.12THz. About 17% improvement in efficiency is found at 2.12THz. |
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