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Latest developments in GaN-based quantum devices for infrared optoelectronics |
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| Authors: | Eva Monroy Fabien Guillot Sylvain Leconte Laurent Nevou Laetitia Doyennette Maria Tchernycheva Francois H. Julien Esther Baumann Fabrizio R. Giorgetta Daniel Hofstetter |
| Affiliation: | 1. Equipe mixte CEA-CNRS Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054, Grenoble cedex 9, France 2. Action OptoGaN, Institut d’Electronique Fondamentale, Université Paris-Sud, UMR 8622 CNRS, 91405, Orsay cedex, France 3. University of Neuchatel, 2000, Neuchatel, Switzerland |
| Abstract: | In this work, we summarize the latest progress in intersubband devices based on GaN/AlN nanostructures for operation in the near-infrared. We first discuss the growth and characterization of ultra-thin GaN/AlN quantum well and quantum dot superlattices by plasma-assisted molecular-beam epitaxy. Then, we present the performance of nitride-based infrared photodetectors and electro-optical modulators operating at 1.55 μm. Finally, we discuss the progress towards intersubband light emitters, including the first experimental observation of intersubband photoluminescence in nitride nanostructures. |
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