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Growth and characterization of III-N bulk crystals |
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| Authors: | R M Frazier B N Feigelson M E Twigg M Murthy J A Freitas |
| Affiliation: | 1. Naval Research Laboratory, Washington, DC, 20375, USA 2. AIME, University of Alabama, Tuscaloosa, AL, 35487, USA 3. SAIC, Washington, DC, 20375, USA 4. George Mason University, Fairfax, VA, 22030, USA |
| Abstract: | Hexagonal BN crystals were grown from solution by application of a thermal gradient. The solvent used to dissolve the source was optimized by changing the ratio of components to have the lowest melting point. The investigation of adding a third component demonstrated further reduction of the melting point with BN as an additive. A solution was created with enhanced properties allowing the growth of BN. BN was grown on a PBN seed at T g = 900 °C and P = 0.2 MPa for approximately 65 h. The BN crystals were found to be embedded in a solvent matrix, as determined by EDS. In addition, GaN crystals were grown in a modified solution at T g = 800 °C and P = 0.2 MPa. Raman spectroscopy verified wurtzite GaN structure with good crystallinity. The successful growth of BN and GaN from solution suggests this to be a method of choice for growth of the III-Ns, and may prove to be a viable alternative to current costly wafer production techniques. |
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