Synthesis of high-density arrays of graphene nanoribbons by anisotropic metal-assisted etching |
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| Affiliation: | 1. Institute for Materials Chemistry and Engineering (IMCE), Kyushu University, Fukuoka 816-8580, Japan;2. Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan;3. PRESTO, Japan Science and Technology Agency (JST), Saitama 332-0012, Japan;1. State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, China;2. Institute for Clean Energy & Advanced Materials, Southwest University, Chongqing 400715, China;1. Department of Manufacturing and Materials Engineering,Kulliyah of Engineering, International Islamic University Malaysia, Jalan Gombak, 53100, Kuala Lumpur, Malaysia;2. Department of Mechatronics Engineering,Kulliyah of Engineering, International Islamic University Malaysia, Jalan Gombak, 53100, Kuala Lumpur, Malaysia;3. Department of Electrical and Electronics Engineering, Faculty of Engineering,Universiti Pertahanan Nasional Malaysia, Kem Sungai Besi, 57000 Kuala Lumpur, Malaysia;1. Kintech Lab Ltd, 3rd Khoroshevskaya Street 12, Moscow 123298, Russia;2. CIC nanoGUNE BRTA, Avenida de Tolosa 76, San Sebastian 20018, Spain;3. Catalan Institute of Nanoscience and Nanotechnology - ICN2, CSIC and BIST, Campus UAB, Bellaterra 08193, Spain;4. National Research Centre “Kurchatov Institute”, Kurchatov Square 1, Moscow 123182, Russia;5. Institute for Spectroscopy of Russian Academy of Sciences, Fizicheskaya Street 5, Troitsk, Moscow 108840, Russia;1. College of Electrical and Information Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China;2. College of Engineering and Technology, Southwest University, Chongqing 400715, China;3. College of Optoelectronic Engineering and Key Laboratory of Optoelectronic Technology & Systems Education Ministry of China, Chongqing University, Chongqing 400715, China |
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| Abstract: | We demonstrate the synthesis of highly aligned dense arrays of graphene nanoribbons (GNRs) based on metal-assisted etching of chemical vapor deposition-grown single-layer graphene. In order to obtain GNR arrays, controlling the direction of the etching becomes an important task. Crystalline surfaces of r- and a-planes of sapphire (α-Al2O3) were found to induce anisotropic etching of the graphene along their specific crystallographic directions. In contrast, anisotropic surface of ST-cut quartz induced few etching lines. We found that the graphene etching is strongly dependent on the metal species; the order of the catalytic activity of metal nanoparticles is Ni > Fe > > Cu. Etching temperature and H2 concentration also strongly influenced the density and quality of the etching lines. Our anisotropic graphene etching is expected to offer a new route toward the synthesis of high density GNR array in large area without relying on any lithographic techniques for future electronic devices. |
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