Two-step growth of graphene with separate controlling nucleation and edge growth directly on SiO2 substrates |
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| Affiliation: | 1. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing 100190, China;2. Department of Physics and Key Laboratory of Yunnan Provincial Higher Education Institutions for Organic Optoelectronic Materials and Devices, Kunming University, Kunming 650214, China;1. Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;2. Institute for Future Environments and School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane, QLD 4000, Australia;3. CSIRO-QUT Joint Sustainable Processes and Devices Laboratory, Commonwealth Scientific and Industrial Research Organization, P.O. Box 218, Lindfield, NSW 2070, Australia;1. Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, 32610, Malaysia;2. BRI Institute, Jl. Harsono RM No.2, Ragunan, Passsar Minggu, Jakarta 12550, Indonesia;3. School of Electrical and Electronic Engineering, University of Adelaide, Australia;4. Department of Electrical Communication Engineering, University of Engineering and Technology Peshawar, Pakistan;1. Departamento de Electrónica, Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla 72840, México;2. Departamento de Electrónica, Benemérita Universidad Autónoma de Puebla, BUAP, Puebla 72570, México;3. Centro de Investigación en Materiales Avanzados, CIMAV Unidad MTY, Nuevo León 66628, México;4. Departamento de Metalurgia e Integridad Estructural, Centro de Investigación en Materiales Avanzados, CIMAV, Chihuahua 31136, México;1. Carbon Materials Innovation Center (CMIC), BASF SE, 67056 Ludwigshafen, Germany;2. FET Systems, BASF SE, 67056 Ludwigshafen, Germany;3. Material Physics Research, BASF SE, 67056 Ludwigshafen, Germany;1. University of Tartu, Institute of Physics, Ravila 14c, 50411 Tartu, Estonia;2. University of Tartu, Institute of Chemistry, Ravila 14a, 50411 Tartu, Estonia;1. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, People׳s Republic of China;2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People׳s Republic of China;3. Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People׳s Republic of China |
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| Abstract: | Recently, we have developed a catalyst-free and direct growth approach for nanographene on various substrates by a remote-plasma assisted chemical vapor deposition. A two-step growth strategy for separately controlling the nucleation and subsequent edge growth was further developed for growing graphene sheets with adjusted nuclei density and large domain size of 500 nm. The key for tuning the growth mode from nucleation to edge growth is the growth temperature; at a specific growth temperature (∼510–545 °C), only edge growth is available while the nucleation can be largely suppressed. This fine tuning of growth process yields a continuous polycrystalline graphene film with domain size of ∼150 nm. This domain size is controllable in this tunable growth to thus giving more freedom to control the graphene film properties. |
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