Tuning doping and strain in graphene by microwave-induced annealing |
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| Affiliation: | 1. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas (INIFTA), CONICET-Facultad de Ciencias Exactas, Universidad Nacional de La Plata, Casilla de Correo 16, Sucursal 4, 1900 La Plata, Argentina;2. Facultad de Ingeniería, Universidad Nacional de La Plata, Calle 47 y 1, 1900 La Plata, Argentina;1. Institute of Physics of the CAS, v.v.i., Na Slovance 1999/2, CZ-182 21 Prague 8, Czech Republic;2. J. Heyrovsky Institute of Physical Chemistry of the CAS, v.v.i., Dolejskova 2155/3, CZ-182 23 Prague 8, Czech Republic;3. Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, V Holesovickach 2, CZ-180 00 Prague 8, Czech Republic |
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| Abstract: | We propose microwave-induced annealing as a rapid, simple, and effective method of controlling surface doping and strain in graphene. Raman spectroscopy was used to confirm that heavy and uniform p-type (1.2 × 1013 cm?2) doping can be achieved within only 5 min without unintended defects by placing graphene onto a substrate with a sufficiently high dielectric constant and exposing graphene and its substrate to microwave irradiation. Further, we showed that ripples are formed in suspended graphene when it is exposed to microwave irradiation. Silicon has a sufficiently high dielectric constant (11.9) and graphene is commonly deposited on silicon-based substrates, so our proposed microwave-induced annealing technique can be used for the rapid manipulation of the properties of graphene at low cost. |
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