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Band-gap tuning of monolayer graphene by oxygen adsorption
Affiliation:1. Department of Physics, Tohoku University, Sendai 980-8578, Japan;2. WPI-Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan;1. Department of Materials Science and Chemical Engineering, Hanyang University, Ansan, Gyeonggi-do 15588, Republic of Korea;2. Intelligent Manufacturing System R&D Department, Korea Institute of Industrial Technology (KITECH), Cheonan, Chungcheongnam-do 31056, Republic of Korea;3. Department of Fusion Chemical Engineering, Hanyang University, Ansan, Gyeonggi-do 15588, Republic of Korea;1. Thin Film and Nanoscience Laboratory, Dept. of Physics, Jadavpur University, Kolkata 700032, India;2. SRM Research Institute & Department of Physics and Nanotechnology, SRM University, Kattankulathur 603203, Tamil Nadu, India;3. Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India;4. School of Materials Science and Nanotechnology, Jadavpur University, Kolkata 700032, India;1. Department of Photonics, Izmir Institute of Technology, 35430 Izmir, Turkey;2. Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium;3. Universidade Federal do Ceara, Departamento de Fisica, Caixa Postal 6030, 60455-760 Fortaleza, Ceara, Brazil
Abstract:We have performed high-resolution angle-resolved photoemission spectroscopy of oxygen-adsorbed monolayer graphene grown on 6H–SiC(0 0 0 1). We found that the energy gap between the π and π1 bands gradually increases with oxygen adsorption to as high as 0.45 eV at the 2000 L oxygen exposure. A systematic shrinkage of the π1 electron Fermi surface was also observed. The present result strongly suggests that the oxidization is a useful technique to create and control the band gap in monolayer graphene.
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