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Defect profile and microstructural development in SnO2-based varistors
Affiliation:1. Department of Physics, NIT Meghalaya, Bijni Campus, Laitumkhrah, Shillong, 793003, Meghalaya, India;2. Department of Physics, IIT Delhi, Hauzkhas, Delhi, 110016, India;1. Department of Chemistry, School of Science and Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing, China;2. Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, China;3. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China;1. INAF Istituto di Radioastronomia, Via P. Gobetti, 101, Bologna 40129, Italy;2. Astro Space Center, Lebedev Physical Institute, Russian Academy of Sciences, Profsouznaya st., 84/32, Moscow 117997, Russia;3. Instituto de Astrofísica de Andalucía, CSIC, Glorieta de la Astronomía s/n, Granada 18008, Spain;4. Moscow Institute of Physics and Technology, Institutsky per., 9, Moscow region, Dolgoprudny 141700, Russia;5. Max-Planck-Institut für Radioastronomie, Auf dem Hügel 69, Bonn 53121, Germany;1. School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, PR China;2. Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Henan University, Kaifeng 475004, P. R China;1. State Key Laboratory of Advanced Special Steels, Shanghai University, China;2. Shanghai University of Applied Mathematics and Mechanics, Yanchang Road 149, 200072 Shanghai, China;1. Department of Chemistry, Jadavpur University, Kolkata 700032, India;2. Department of Chemistry, Indian Institute of Engineering Science and Technology, Botanic Garden, Howrah 711103, India
Abstract:The microstructural development and the stabilised valence of the ions added to SnO2 were analysed. Aiming at a better interpretation of the involved phenomena, the effects on grain growth, secondary phase formation and structure of adding Co3O4, ZnO, MnO2, Sb2O3, or Nb2O5 have been studied. We found that cobalt, zinc and manganese stabilise as Co+2, Zn+2 and Mn+2 in the lattice, favouring the oxygen vacancy apparition and then, the grain growth and the potential barrier formation. Sb2O3 or Nb2O5 reduces the total oxygen vacancy concentration and the grain growth. Sb2O3 addition favours the CoSnO3 particle formation and Nb2O5 favours the formation of particles with an intermediate composition between CoSnO3 and Co2SnO4 in systems with Co3O4. These particles could also control the sintering and grain growth rates.
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