Lead germanium oxide sinter-assisted PZT composite thick films |
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| Affiliation: | 1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Key Laboratory of Inorganic Functional Material and Device, 200080, Shanghai, PR China;2. University of Chinese Academy of Sciences, 100049, Beijing, PR China;1. School of Science, Xi׳an University of Architecture and Technology, Xi׳an 710055, China;2. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi׳an Jiaotong University, Xi׳an 710049, China;1. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Republic of Korea;2. Department of Physics, Sri Venkateswara University, Tirupati 517 502, India;1. Key Laboratory for Macromolecular Science of Shaanxi Province, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an, 710062 Shaanxi, PR China;2. School of Materials Science and Engineering, Xi’an University of Technology, Xi’an, 710048 Shaanxi, China;3. Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, USA |
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| Abstract: | Thick films of niobium doped lead zirconate titanate (PNZT) were prepared from a sol-gel/PZT powder composite slurry. The effects of adding different amounts of sol-gel derived lead germanium oxide (PGO) as sintering aid were examined. Four layers of composite, with intermediate sol infiltrations, were deposited by spinning onto Pt/Ti/SiO2/Si substrates followed by drying and annealing. Addition of PGO enhanced the densification process at a temperature as low as 770 °C. It resulted in an increase in the film properties that depended upon the level of PGO addition. Film properties were assessed by measuring the capacitance and dielectric loss. d33,f and e31,f piezoelectric coefficient measurements were carried out after poling at 10 V/μm for 5 min at 130 °C. A maximum relative permittivity of 500 was observed between 5 and 8 wt.% PGO addition. The maximum in d33,f was found to be about 40 pC/N. Additions between 7 and 10 wt.% PGO led to the maximum e31,f piezoelectric coefficient of about −1.5 C/m2. |
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