Phase field microelasticity modeling of dislocation dynamics near free surface and in heteroepitaxial thin films |
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| Affiliation: | 1. Applied Mechanics and Structure Safety Key Laboratory of Sichuan Province, School of Mechanics and Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China;2. Institute of Applied Mechanics, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu, Sichuan 610031, China;3. Institute of Advanced Technology, Beijing Institute of Technology, Beijing 100081, China;1. Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P R China;2. School of Materials Science and Engineering, Research Institute for Energy Equipment Materials, and Tianjin Key Laboratory of Materials Laminating Fabrication and Interface Control Technology, Hebei University of Technology, Tianjin 300130, P R China;3. Hypergravity Research Center, Zhejiang University, Hangzhou 310058, P R China;1. Karlsruhe Institute of Technology, IAM, Kaiserstraße 12, Karlsruhe 76131, Germany;2. Fraunhofer IWM, Woehlerstr. 11, Freiburg 79108, Germany;1. Institute of Applied Mechanics, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu, Sichuan 610031, China;2. Applied Mechanics and Structure Safety Key Laboratory of Sichuan Province, School of Mechanics and Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China;3. School of Civil Engineering, Wuhan University, Wuhan 430072, China;4. Institute of Advanced Technology, Beijing Institute of Technology, Beijing 100081, China |
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| Abstract: | Dislocation dynamics near a free surface and in heteroepitaxial thin films are simulated using an extended version of the nanoscale Phase Field Microelasticity model of dislocations Acta Mater. 49 (2001) 1847]. The model automatically takes into account the effect of image forces on dislocation motions. In particular, the operations of Frank–Read sources in epitaxial films grown on infinitely thick and relatively thin substrates are investigated. The simulation reveals different misfit dislocation behaviors at the interface. Its implication on the interface susceptibility to crack nucleation is discussed. |
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