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Electrical conductivity of hexagonal Ba(Ti0.94Ga0.06)O2.97 ceramics
Affiliation:1. Department of Engineering Materials, Sir Robert Hadfield Building, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK;2. Instituto de Cerámica y Vidrio, Consejo Superior de Investigaciones Cientı́ficas, Campus de Cantoblanco, Camino de Valdelatas, Madrid, 28049, Spain;3. Department of Ceramics and Glass Engineering, UIMC, University of Aveiro, 3810 Averio, Portugal;1. UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India;2. Tata Institute of Fundamental Research (TIFR), Mumbai-400005, India;3. Ceramic Laboratory, LMDDD, RRCAT, Indore 452013, India;1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China;2. College of Communication Engineering, Chengdu University of Information Technology, Chengdu, 610225, China;1. Lukasiewicz Research Network - Cracow Institute of Technology, Zakopianska 73, 30-418, Krakow, Poland;2. Faculty of Materials Science and Ceramics, AGH University of Science and Technology, 30-059, Krakow, Poland;1. College of Information Science and Engineering, Guilin University of Technology, Guilin 541004, China;2. State Key Laboratory Breeding Base of Nonferrous Metals and Specific Materials Processing, Guangxi Universities Key Laboratory of Non-Ferrous Metal Oxide Electronic Functional Materials and Devices, College of Material Science and Engineering, Guilin University of Technology, Guilin 541004, China
Abstract:Impedance spectroscopy is used to estimate the bulk conductivity, σb, of hexagonal (6H)-Ba(Ti0.94Ga0.06)O2.97 ceramics in air, N2 and 5%H2/95%N2 between 400 and 1000 °C. Isothermal plots of log σb vs log pO2 in the temperature range between 700 and 1000 °C show the presence of a p–n transition with slopes of ∼−1/4 and +1/4 in the n- and p-type regions indicating that the conductivity obeys the ‘extrinsic’ model proposed by Smyth and co-workers for undoped and acceptor-doped cubic BaTiO3-based materials J. Am. Ceram. Soc. 64 (1981) 556; J. Am. Ceram. Soc. 65 (1982) 167]. The activation energy Ea for oxidation in the p-type region to produce free holes is similar for 6H-Ba(Ti0.94Ga0.06)O2.97 and cubic BaTiO3-based ceramics with an estimated value from σb data of ∼0.8 eV. The band gap for 6H-Ba(Ti0.94Ga0.06)O2.97 ceramics is ∼3.2 eV.
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