What is claimed to be the industry’s first 90W c-band GaAs field effect transistor (GaAs FET) suitable for use in solid-state power amplifiers (SSPA) for base station or earth-station satcom and radar applications, as well as for microwave digital radios for terrestrial communications, has been released by Toshiba America Electronic Components Inc. Using TAEC’s HFET process technology, the TIM5964-90SL GaAs FET employs ion plantation technology to produce an output power of 49.5dBm at a frequency range of 5.9GHz to 6.4GHz. and is priced at around $1,500 each.This is a short news story only. Visit www.three-fives.com for the latest advanced semiconductor industry news.
