Monolithic integration of a 94 GHz AlGaAs/GaAs 2-DEG mixer onquartz substrate by epitaxial lift-off |
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| Authors: | Basco R Prabhu A Yngvesson S Kei May Lau |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA; |
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| Abstract: | In this paper, we report the integration of an AlGaAs/GaAs two-dimensional electron gas (2-DEG) bolometric mixer and a quartz-based microstrip circuit using the epitaxial lift-off (ELO) technique. The 1 μm thick high-mobility 2-DEG device transplanted on quartz showed no sign of degradation resulting from the ELO process. The 2-DEG mixer fabrication procedure demonstrated here is advantageous for its simplicity and uncritical choice of substrate. We obtained a minimum intrinsic conversion loss of 17 dB at 94 GHz at liquid nitrogen temperature. The measured IF bandwidth of the mixer was greater than 3 GHz |
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