| AuGeNi/n—InP欧姆接触研究 |
| |
| 引用本文： | 盛永喜 鲍希茂. AuGeNi/n—InP欧姆接触研究[J]. 固体电子学研究与进展, 1990, 10(4): 386-391 |
| |
| 作者姓名： | 盛永喜 鲍希茂 |
| |
| 作者单位： | 南京电子器件研究所(盛永喜，茅保华)，南京大学物理系(鲍希茂) |
| |
| 摘 要： | 本文对金属—n型Ⅲ-Ⅴ族化合物半导体欧姆接触的接触电阻进行了理论分析,研究了AuGeNi/n-InP欧姆接触的电学特性、冶金性质和组分分布,其最佳工艺条件已用于器件制造.
|
| 关 键 词： | AuGeNi／n－InP 欧姆接触 接触电阻 |
Investigation of AuGeNi/n-lnP Ohmic Contact |
| |
| Abstract: | In this paper, the contact resistance of a metal-n type III-V compound semiconductor ohmic contact is theoretically analysed. The electrical characteristics, metallurgical properties and component percentage of AuGeNi/n-InP ohmic contact are studied. The optimal parameters have been used to fabricate some devices. |
| |
| Keywords: | |
| 本文献已被 CNKI 维普 等数据库收录！ |
|
