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Core-level X-ray photoemission spectral shift through the successive phase transitions in layered TlInS2
Authors:Takahiko Ishizu  YongGu Shim  Nazim Mamedov  Kouichi Ichikawa
Affiliation:a Department of Mathematical Sciences, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan
b Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan
c Department of Electrical, Electronics and Computer Engineering, Chiba Institute of Technology, Narashino 275-0016, Japan
d Institute of Physics, Azerbaijan National Academy of Science, Baku, AZ-1143, Azerbaijan
Abstract:Temperature-dependent change in core-level electronic structures of the layered semiconductor-ferroelectric TlInS2 with incommensurate phase has been investigated by means of X-ray photoemission spectroscopy. The temperature dependence of the relative peak position for each core level (Tl 4f, In 3d and S 2p) is found to differ very much in the regions bordering each other at the normal-incommensurate phase transition point of 218 K. The obtained data suggest that the charge distribution in TlInS2 dramatically changes upon passing from the normal phase (T > 218 K) to the spatially modulated incommensurate phase (T < 218 K).
Keywords:X-ray photoemission spectroscopy (XPS)  TlInS2  Phase transition  Incommensurate phase
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