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Characteristics of 4H-SiC Pt-gate metal-semiconductor field-effect transistor for use at high temperatures |
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| Authors: | Yasuhiro Ueda Yasuhiko Nomura Yoshikazu Nakayama |
| Affiliation: | a R&D Head Quarter, SANYO Electric Co., Ltd., 1-18-13 Hashiridani, Hirakata, Osaka, 573-8534 Japan b Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan c Department of Mechanical Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan |
| Abstract: | The 4H-SiC Pt recessed gate metal-semiconductor field-effect transistor (MESFET) was fabricated by reactive ion etching (RIE) for device isolation. The device exhibited a pinch-off voltage of − 9 V, transconductance (gm) of 19.2 mS/mm, and gate breakdown voltage of − 115 V at room temperature. The characteristics of this MESFET were investigated at high temperatures. It was shown that the MESFET can operate at 560 °C. The time dependence of the IDS of a MESFET was also investigated at 400 °C in an Ar atmosphere. The change of IDS (VG = 0 V) was less than 5%, for the duration of 200 h. |
| Keywords: | Electronic devices Silicon carbide MESFET Platinum High temperature 4H-SiC |
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