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Study of steady-state photoluminescence of AgInSe2 crystals |
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| Authors: | Kaoru Kishigui Gou Murakami Kenji Yoshino |
| Affiliation: | a Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuencho, Sakai, Osaka 599-8531, Japan b Department of Electrical and Electronic Engineering, University of Miyazaki, 1-1 Gakuen, Kibanadai-nishi, Miyazaki 889-2192, Japan c Department of Electrical, Electronic and Computer Engineering, Chiba Institute of Technology, 2-17-1 Tsudanuma, Narashino, Chiba 275-0016, Japan |
| Abstract: | The steady-state photoluminescence (PL) spectra of AgInSe2 grown by the Hot-Press method have been examined. The broad peaks located at 1.19 eV and 1.16 eV are very likely to be the donor-acceptor-pair emissions. The energies of the donor levels participating in these emissions correspondingly are 25 eV and 50-52 meV, as found from the analyses of the activation energies of the PL intensity. The peaks observed in the obtained PL spectra in the band-edge region are attributed to free and bound excitons. The binding energy of the free exciton is estimated to be 29 meV. |
| Keywords: | AgInSe2 Photoluminescence Hot-Press method Donor-acceptor pair emission Free exciton |
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