High dielectric constant TiO2 film grown on polysilicon by liquid phase deposition |
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Affiliation: | Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan, ROC |
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Abstract: | In this study, titanium dioxide (TiO2) films were grown on polycrystalline silicon by liquid phase deposition (LPD) with ammonium hexafluoro-titanate and boric acid as sources. The film structure is amorphous as examined by X-ray diffraction (XRD). A uniform composition of LPD-TiO2 was observed by SIMS examination. The leakage current density of an Al/LPD-TiO2/poly-Si/p-type Si metal–oxide–semiconductor (MOS) structure is 1.9 A/cm2 at the negative electric field of 0.7 MV/cm. The dielectric constant is 29.5 after O2 annealing at 450 °C. The leakage current densities can be improved effectively with a thermal oxidized SiO2 added at the interface of LPD-TiO2/poly-Si. The leakage current density can reach 3.1×10?4 A/cm2 at the negative electric field of 0.7 MV/cm and the dielectric constant is 9.8. |
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