On temperature coefficient of resistance of boron-doped SiGe films deposited by sputtering |
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| Affiliation: | 1. Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Hong Kong, PR China;2. Institute of Physics, Beograd, 11080 Zemun, Pregrevica 118, Serbia;3. Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, PR China;4. Department of Electronic Engineering, The Chinese University of Hong Kong, PR China |
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| Abstract: | Silicon–germanium films, doped with boron, were deposited on oxidised silicon substrates by RF magnetron sputtering. The post-deposition dopant activation and film crystallisation was done by annealing in the temperature range from 580 to 900 °C. The structural changes in the silicon–germanium films caused by the presence of boron and annealing were investigated by high-resolution transmission electron microscopy. The temperature coefficient of resistance (TCR) was characterised in the temperature range from room temperature to 210 °C and correlated to the nano-structure of the films. The TCR values were explained by the contribution of different scattering mechanisms and confirmed by low-frequency noise measurement. Very low values of TCR can be obtained by selecting appropriate boron content and post-deposition annealing conditions. |
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