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多孔硅的微结构对其Raman谱的影响
引用本文:刘小兵,史向华,柳毅,柳玥,王行军,丁训民,侯晓远.多孔硅的微结构对其Raman谱的影响[J].半导体光电,2004,25(3):194-196.
作者姓名:刘小兵  史向华  柳毅  柳玥  王行军  丁训民  侯晓远
作者单位:长沙电力学院,物理与信息工程系,湖南,长沙,410077;复旦大学,应用表面物理国家重点实验室,上海,200433
摘    要:用场发射扫描电子显微镜研究了用直流化学腐蚀和脉冲电化学腐蚀方法制备的多孔硅(PS)的微结构,观察并测试了孔洞的垂直度、深度以及洞宽(直径),对PS的纵向微结构进行了二次电子图像和背散电子图像的分析.使用高灵敏的共焦显微Raman系统研究了纵向的Raman谱,同时分析了微结构对纵向Raman效应的影响.

关 键 词:多孔硅  场发射扫描电镜  Raman谱  微结构
文章编号:1001-5868(2004)03-0194-03
修稿时间:2003年4月7日

Effects of Micro-structure of Porous Silicon on Its Raman Spectra
LIU Xiao-bing,SHI Xiang-hua,LIU Yi,LIU Yue,WANG Xing-jun,DING Xun-min,HOU Xiao-yuan.Effects of Micro-structure of Porous Silicon on Its Raman Spectra[J].Semiconductor Optoelectronics,2004,25(3):194-196.
Authors:LIU Xiao-bing  SHI Xiang-hua  LIU Yi  LIU Yue  WANG Xing-jun  DING Xun-min  HOU Xiao-yuan
Affiliation:LIU Xiao-bing1,SHI Xiang-hua1,LIU Yi2,LIU Yue2,WANG Xing-jun2,DING Xun-min2,HOU Xiao-yuan2
Abstract:The micro-structures of porous silicon(PS) prepared by DC electro-etched and pulse electro-etched are studied with the help of a field emission scanning electron microscope. The verticality, depth and width(diameter)of the pores are observed and measured. The vertical micro-structures of the PS are analyzed by studying the double electron pictures and the back scattered electron imagery . The vertical Raman spectra are studied by means of the high sensitive co-focused micro-Raman system . The effects of the micro-structure on the vertical Raman spectra are analyzed in the meantime.
Keywords:porous silicon  field emission scanning electronmicroscope  Raman spectra  micro-structure
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