| 工艺参数对TVS器件电性能的影响 |
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| 引用本文： | 肖敏,曾祥斌,袁德成,孙树梅.工艺参数对TVS器件电性能的影响[J].电力电子技术,2007,41(6):93-95. |
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| 作者姓名： | 肖敏 曾祥斌 袁德成 孙树梅 |
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| 作者单位： | 华中科技大学,湖北,武汉,430074;上海美高森美半导体有限公司,上海,201108 |
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| 摘 要： | 采用液态源扩散法制备了双向型瞬变电压抑制二极管(Transient Voltage Suppressor Diode,简称TVS)器件.研究了扩散温度、扩散时间、电阻率、钝化保护等工艺参数对TVS器件电性能的影响.扩散温度、扩散时间的增加将使扩散结的结深增加;电阻率的提高及结深的增加,将使TVS器件的雪崩击穿电压增大;合适的钝化保护方法将有助于减小器件的反向漏电流.给出了电压和扩散时间之间的经验估算公式,该公式可用来指导得到希望的TVS目标电压档.据验算,该公式的误差在10%以内.
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| 关 键 词： | 半导体元器件 工艺参数/瞬变电压抑制二极管 |
| 文章编号： | 1000-100X（2007）06-0093-03 |
| 修稿时间： | 2006-09-22 |
Effects of Process Parameters on Electrical Performance of TVS Devices |
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| XIAO Min,ZENG Xiang-bin,ANDY T S Yuen,SUN Shu-mei.Effects of Process Parameters on Electrical Performance of TVS Devices[J].Power Electronics,2007,41(6):93-95. |
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| Authors: | XIAO Min ZENG Xiang-bin ANDY T S Yuen SUN Shu-mei |
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| Affiliation: | 1.Huazhong University of Science and Technology, Wuhan 430074, China; 2.Shanghai Microsemi Semiconductor Co., Ltd, Shanghai 201108, China |
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| Abstract: | TVS devices were prepared by liquid diffusion technique.The effects of process parameters on the electrical performance of TVS diodes were described.These parameters include diffusion time,diffusion temperature,resistivity,and passivation technique.The results indicated that the junction depth increase as the diffusion time and temperature increase,and avalanche breakdown voltage increase when the resistivity and junction depth increase.Furthermore,suitable passivation methods are helpful to the standoff leakage current.The experiential formula used for estimating diffusion time was given.It's validated that the error is not larger than 10%. |
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| Keywords: | semiconductor device process parameters/transient voltage suppressor diode |
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