MnxCd1-xIn2Te4晶体生长及其性能研究

采用ACRT-B法生长了四元稀磁半导体化合物Mn0.1dCd0.9In2dTe4晶体。采用扫描电镜、X射线衍射仪、ISIS能谱仪、Leica定量金相分析仪以及傅里叶变换红外光谱仪研究了晶体中相的结构，形貌、成分及晶片的红外透射光谱。发现晶体生长初始端由于溶质再分配而引起成分偏离配料比，结果出现三种相：α相、β相和β1相，其中α相和β相是在晶体生长过程中形成的，随温度降低，从α相中又析出β1相，当晶体生长到稳定段，完全形成β相，Mn0.1Cd0.9In2Te4晶体从生长初始端到接近稳态区，β1相内规则排列状向不规则排列的近似圆片状发展。禁带宽度为1.2eV的Mn0.1Cd0.9In2Te4在10000～4000cm^-1的近红外波数范围内，其透过率最高达83%，在4000～5000cm^-1的中红外波数范围内透过率为59%～65%。

Crystal growth of MnxCd1-xIn2Te4 and its physical properties

A diluted magnetic semiconductor MnxCd1-xIn2Te4( x =0.1) ingot is grown by ACRT-B method. Using scanning electron microscopy, X-ray powder diffractometer, ISIS energy-dispersive spectroscopy, Leica quantitative optical microscope and Fourier infrared spectrometer, the microstructure, morphology compositional distribution and transmittance properties of the ingot are analyzed. It is found that α, β and β_1 phases are at the tip of the Mn0.1 Cd0.9 In2Te4 ingot. Among them, α and β phases are formed during the growing process while β_1 is precipitated from α phase when temperature is below solidus. After the ingot is grown for 36mm, only β phase is formed. The morphology of β_1 phase varies from regular plates to irregular near-round blocks along the axis of the ingot from the beginning. The band gap of Mn0.1 Cd0.9 In2Te4 ingot is 1.2eV. Maximum of its near infrared transmittance in the range of 10000～2500cm -1 is up to 83% and its middle infrared transmittance in the range of 4000~500cm_1 is from 59% to 65%.