| 单片机系统脉冲γ辐射效应研究 |
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| 引用本文： | 杨善潮,马强,金晓明,李瑞宾,林东生,陈伟,刘岩. 单片机系统脉冲γ辐射效应研究[J]. 原子能科学技术, 2012, 46(Z1): 602-606. DOI: 10.7538/yzk.2012.46.suppl.0602 |
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| 作者姓名： | 杨善潮 马强 金晓明 李瑞宾 林东生 陈伟 刘岩 |
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| 作者单位： | 西北核技术研究所，陕西 西安710024 |
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| 摘 要： | 本文以建立的EE80C196KC20型单片机运行系统为研究对象，在“强光一号”加速器上，对系统中的LM7805型电源芯片和EE80C196KC20型单片机进行了脉冲γ辐射效应实验研究，获得了单片机的闩锁阈值，得到了功耗电流、I/O输出随剂量率的变化规律，从实验上证实了电源芯片对单片机脉冲γ辐射闩锁效应的抑制作用。
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| 关 键 词： | 脉冲&gamma 辐射 单片机系统 闩锁 瞬时扰动 |
Research of Pulse Gamma Ray Radiation Effect on Microcontroller System |
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| YANG Shan-chao , MA Qiang , JIN Xiao-ming , LI Rui-bin , LIN Dong-sheng , CHEN Wei , LIU Yan. Research of Pulse Gamma Ray Radiation Effect on Microcontroller System[J]. Atomic Energy Science and Technology, 2012, 46(Z1): 602-606. DOI: 10.7538/yzk.2012.46.suppl.0602 |
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| Authors: | YANG Shan-chao MA Qiang JIN Xiao-ming LI Rui-bin LIN Dong-sheng CHEN Wei LIU Yan |
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| Affiliation: | Northwest Institute of Nuclear Technology, Xi’an 710024, China |
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| Abstract: | An experimental result of power chip LM7805 and microcontroller EE80C196KC20 based on the EE80C196KC20 testing system was presented. The pulse gamma ray radiation effect was investigated using “Qiangguang-Ⅰ” accelerator. Latchup threshold of the microcontroller was obtained, and the relationship of supply current and I/O output with the transient dose rate was observed. The result shows that the restrainability of power chip on pulse gamma ray radiation induces microcontroller latchup effect. |
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| Keywords: | pulse gamma ray radiation microcontroller system latchup transient disturbance |
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