硅片的激光吸收系数修正与弯曲试验

考虑热物性能参数随温度变化的因素，以硅为对象进行激光弯曲模拟和试验，借助APDL语言编写激光弯曲成形的仿真程序，对单脉冲作用过程进行模拟，以得到单点脉冲周期内的温度分布；并采用NiCr/NiSi合金薄膜热电偶对单脉冲作用过程中的温度分布进行测量，对比上述的温度模拟与测量结果，修正硅材料的激光综合吸收系数。采用有限元分析软件实现了硅片的脉冲激光弯曲成形的仿真和模拟，并对多次连续扫描的模拟结果与硅片弯曲试验结果进行对比，验证了仿真程序的有效性，为硅片的激光弯曲成形提供了理论与试验依据。

Modification of silicon absorbing coefficient in laser bending experiment

Considering thermal factors changing with temperature, the laser bending experiments and simulation were conducted based on the material of silicon. The laser bending simulation program is edited by APDL and started from a single point of the temperature field, temperature variation on action point in cycle time were obtained；NiCr/NiSi alloy thin film thermocouple was applied to measure temperature distribution of single-pulse action process. Comparing the temperature field simulation results with thermocouple measurements results, absorption factor of silicon was modified into synthetic coefficient. Finite element analysis software was used in the simulation of pulse laser bending of silicon. The results of the simulation and experiments indicate that the simulation program was effective. The outcomes provided theoretical and experimental foundation for laser bending of silicon.