Static and dynamic test methods for thin mono- and polycrystalline Si-films

We present nondestructive optical methods for the characterization of thin (<30 m) mono-and polycrystalline Si-films. The thickness and homogeneity will be measured with reflectance interferometry. This method is suitable for the end point detection during the etching process of monocrystalline Si. The application of laser absorption for the measurement of the thickness is also discussed. Michelson interferometry is applied for the characterization of the dynamic behavior of thin Si-films. We have analyzed the amplitude and the function of the oscillatory motion after acoustic and electrical excitation.