Special features of charge transport in PbGa2Se4 crystals |
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Authors: | B. G. Tagiev N. N. Musaeva R. B. Dzhabbarov |
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Affiliation: | (1) Institute of Physics, Academy of Sciences of Azerbaijan, Baku, 370143, Azerbaijan |
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Abstract: | The current-voltage (I-V) characteristics of PbGa2Se4 single crystals grown by the Bridgman-Stockbarger method with a resistivity of 1010–1012 Ω cm were measured. The value of the majority carrier mobility μ=14 cm2 V?1 s?1, calculated by the differential method of analysis of I-V characteristics, makes it possible to evaluate a number of parameters: the carrier concentration at the cathode (nc0=2.48 cm?3), the width of the contact barrier dc=5.4×10?8 cm, the cathode transparency D c * =10?5–10?4 eV, and the quasi-Fermi level EF=0.38 eV. It is found that a high electric field provides the charge transport through PbGa2Se4 crystals in accordance with the Pool-Frenkel effect. The value of the dielectric constant calculated from the Frenkel factor is found to be equal to 8.4. |
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