Tellurium-rich growth and laser fabrication of lead-tin-telluride (Pb1−xSnxTe: 0.06 |
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| Authors: | Wayne Lo |
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| Affiliation: | (1) Research Laboratories, General Motors Corporation, 48090 Warren, MI |
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| Abstract: | Single crystals of Pb1−x Snx Te (0.0619 cm−3 and dislocation density as low as 103 cm−2. Diode lasers fabricated from these crystals have contact resistances of 2×10−5 Ω-cm2 and a single-mode single-ended output power of 750 μW at heat sink temperatures around 15 K. |
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| Keywords: | Pb1− x Snx Te Te-rich crystal growth diode lasers contact resistance dislocations |
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