Synthesis and interlayer modification of RbLaTa2O7 |
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| Authors: | Wenfeng Shangguan Mu Zhang Jian Yuan Mingyuan Gu |
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| Affiliation: | a Department of Power and Energy Engineering, School of Mechanical and Power Engineering, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, China;b State Key Laboratory of MMCs, Shanghai Jiao Tong University, Shanghai 200030, China |
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| Abstract: | A layered semiconductor, lanthanum tantalum oxide was prepared by solid reaction at high temperature, and the processes for the modification of the interlayers by protonation, intercalation and pillaring were investigated. n-Butylamine could easily be intercalated into the interlayers of HLaTa2O7 to significantly enhance the interlayer distance, which facilitated the exchange of cation with n-butylamine. Finally, CdO pillars in the interlayer of lanthanum tantalum oxide were formed via calcinating at 500°C in air. |
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| Keywords: | Layered metal oxides Intercalation Pillaring |
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