首页 | 本学科首页   官方微博 | 高级检索  
     


Electrical Characteristics of Al/Poly(methyl methacrylate)/p-Si Schottky Device
Authors:AB Selçuk  S Bilge Ocak  FG Aras  E Oz Orhan
Affiliation:1. Sarakoy Nuclear Research and Training Centre, Saray, Kazan, 06983, Ankara, Turkey
2. Graduate School of Natural and Applied Sciences, Gazi University, Ankara, Turkey
Abstract:Al/Poly(methyl methacrylate)(PMMA)/p-Si organic Schottky devices were fabricated on a p-Si semiconductor wafer by spin coating of PMMA solution. The capacitance–voltage (CV) and conductance–voltage (GV) characteristics of Al/PMMA/p-Si structures have been investigated in the frequency range of 1 kHz–10 MHz at room temperature. The diode parameters such as ideality factor, series resistance and barrier height were calculated from the forward bias current–voltage (IV) characteristics. In order to explain the electrical characteristics of metal–polymer–semiconductor (MPS) with a PMMA interface, the investigation of interface states density and series resistance from CV and GV characteristics in the MPS structures with thin interfacial insulator layer have been reported. The measurements of capacitance (C) and conductance (G) were found to be strongly dependent on bias voltage and frequency for Al/PMMA/p-Si structures. The values of interface state density (D it) were calculated. These values of D it and series resistance (R s) were responsible for the non-ideal behavior of IV and CV characteristics.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号