| C掺杂对Al中He行为的影响 |
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| 引用本文： | 向鑫,陈长安,刘柯钊,罗丽珠,刘婷婷,王小英. C掺杂对Al中He行为的影响[J]. 金属学报, 2010, 0(3) |
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| 作者姓名： | 向鑫 陈长安 刘柯钊 罗丽珠 刘婷婷 王小英 |
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| 作者单位： | 中国工程物理研究院;表面物理与化学国家重点实验室; |
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| 基金项目： | 国家自然科学基金资助项目50671017~~ |
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| 摘 要： | 用离子注入技术实现了Al表面C元素的掺杂,并利用XPS,XRD,TEM和SEM研究了C掺杂对Al中离子注入He行为的影响.结果表明,掺杂的C在Al表面形成了Al_4C_3,随着C掺杂量的增加,Al表面组织的择优取向和晶胞体积发生改变,从而影响了Al中的He离子注入行为.预先掺杂的C对He离子注入Al表面的鼓泡行为有重要影响,其影响程度与掺杂剂量有关.小剂量C掺杂后,能有效抑制鼓泡的长大,并使Al表面鼓泡均匀分布;更高剂量C掺杂后,C对表面鼓泡的抑制作用减弱,甚至加剧He离子的辐照损伤,Al表面出现孔洞和剥落现象.掺杂的C对Al基体的微观结构也有很大影响.
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| 关 键 词： | Al C掺杂 He行为 鼓泡 微观结构 |
EFFECT OF C DOPING ON He BEHAVIOR IN Al |
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| Abstract: | It has been verified that He embrittlement in metals could be suppressed by proper additions of alloying elements,and this effect is related to highly dispersive secondary phase precipitated in the matrix.Effect of C doping on ion implantated He behavior in Al has been investigated by XPS, XRD,TEM and SEM.It was found that the secondary phase precipitated in the surface of Al doped with C is Al_4C_3.With the increase of the dose of C,the volume of Al unit cell increased,and the preferred orientation of Al s... |
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| Keywords: | Al C doping He behavior blistering microstructure |
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