| GaAs MMIC MESFET混频器性能比较 |
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| 引用本文： | 孙晓玮,程知群,夏冠群.GaAs MMIC MESFET混频器性能比较[J].固体电子学研究与进展,2000,20(1):110-115. |
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| 作者姓名： | 孙晓玮 程知群 夏冠群 |
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| 作者单位： | 中国科学院上海冶金研究所!200050 |
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| 基金项目： | 中国科学院重点项目资助 |
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| 摘 要： | 给出了几种 Ga As MESFET单片混频器结构与芯片测试结果比较。实验表明 ,在相同本振功率激励下 Ga As MMIC双栅混频器具有良好变频特性 ,栅混频器指标次之 ,漏混频器结构最简单 ,但变频特性不如前两种。另外 ,单片巴仑双平衡混频器具有高的动态范围和宽频段工作特点。
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| 关 键 词： | 砷化镓单片集成电路 双栅场效应晶体管 混频器 |
Performance Comparison for GaAs MMIC Mixers |
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| Sun Xiaowei,Cheng Zhiqun,Xia Guanqun.Performance Comparison for GaAs MMIC Mixers[J].Research & Progress of Solid State Electronics,2000,20(1):110-115. |
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| Authors: | Sun Xiaowei Cheng Zhiqun Xia Guanqun |
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| Abstract: | The comparisons of the constructions and measurement results for a few kinds of GaAs MMIC mixers are investigated. The experiment shows that the dual gate MMIC mixer is of an excellent conversion property, and next one is the MMIC gate mixer. The construction of the drain mixer is very simple, but conversion property is not better than above two mixers. The MMIC balun double balanced mixer has a high dynamic range and a wideband operation. |
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| Keywords: | GaAs MMIC dual gate FET mixer |
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