Phase transformation of solution‐based p‐type Cu2ZnSnS4 thin film: applicable for solar cell

In this present work, quaternary Cu₂ZnSnS₄ thin films were deposited on commercial glass substrates at room temperature by a novel solution growth dip coating technique. The influence of annealing temperature of the films at 300 °C in a hot air furnace without the presence of any inert gas, on structural, optical, and electrical properties was investigated and discussed. The structural analyses were analyzed by X‐ray diffraction and Raman spectroscopy, whereas optical and electrical properties were analyzed by means of ultra violet infrared (UV‐ViS/IR). The results analyzed showed that there exists a phase formation from orthorhombic to kesterite crystal structure with an increase in optical bandgap and an optical conductivity, with an increase in annealing temperature. The electrical conductivity was observed of the order of 10^?6 ohm cm^?1. Copyright © 2015 John Wiley & Sons, Ltd.