杂质吸附对背栅MoS2场效应晶体管电学性能的影响

为了探究MoS2（二硫化钼）薄膜吸附的杂质分子对载流子输运以及相关器件的电学性能造成的影响，制备了多层MoS2背栅场效应晶体管。实验结果表明：当MoS2器件的沟道暴露在空气中时，在不同的偏压条件和扫描条件下，器件表现出不同的回滞窗口和不同的亚阈值斜率。因此，只有减小了外界吸附分子的影响，才能获得具有稳定电学性能的MoS2器件，并确保迁移率、亚阈值斜率、开启电压等重要电学参数的可靠性。

Influence of Impurity Adsorption on Electrical Properties of Back-gated MoS2 Field Effect Transistors

To study the influence brought by impurity molecules on the MoS2 devices, back-gated MoS2 field transistors was fabricated. And we investigated the electrical characteristics of the MoS2 FETs, whose channel is exposed to the ambient. The device exhibits various hysteresis windows and SS (sub-threshold swing) under different bias and different scanning conditions, which is induced by the variation of adsorption capacity of MoS2 channel and the altered adsorption rate of impurities. Therefore, a series of important electrical parameters such as mobility, sub-threshold slope and threshold voltage will not be reliable unless the foreign impurities are suppressed.