| 低压化学气相沉积制备ZrC涂层：原位溴化工艺 |
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| 引用本文： | 马新,胡海峰,邱海鹏.低压化学气相沉积制备ZrC涂层：原位溴化工艺[J].稀有金属材料与工程,2018,47(S2):58-61. |
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| 作者姓名： | 马新 胡海峰 邱海鹏 |
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| 作者单位： | 中航工业复合材料技术中心 先进复合材料国防科技重点实验室,, |
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| 基金项目： | 国家自然科学基金项目（Grant No. 91216302）,国家重点基础研究发展计划（Grant No. 2015CB655200） |
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| 摘 要： | 本研究设计了一种溴化装置,用于合成并稳定控制ZrBr4蒸汽的流量。采用低压化学沉积技术,以Zr-Br2-C3H6-H2-Ar为体系,1200°C在石墨基底上制备了ZrC涂层。研究了气体组分(源气C/Zr比)对ZrC涂层微观形貌及生长机制的影响。源气C/Zr比为1.5时,涂层的沉积过程为由表面反应机制为主,ZrC涂层较为疏松。源气C/Zr比为0.5~1时,扩散动力学是涂层的主要生长机制,所制备的ZrC涂层具有致密均匀ZrC涂层,并沿(200)晶面择优取向。同时,源气C/Zr比为0.5时,制备的ZrC涂层无自由碳存在并具有近化学计量比。
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| 关 键 词： | ZrC涂层 超高温涂层 化学气相沉积 气体组分 生长机制。 |
| 收稿时间： | 2017/12/11 0:00:00 |
| 修稿时间： | 2017/12/11 0:00:00 |
Fabrication of uniform ZrC coating by low pressure chemical vapor deposition: The in-situ bromination method |
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| Xin M,Haifeng Hu and Haipeng Qiu.Fabrication of uniform ZrC coating by low pressure chemical vapor deposition: The in-situ bromination method[J].Rare Metal Materials and Engineering,2018,47(S2):58-61. |
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| Authors: | Xin M Haifeng Hu and Haipeng Qiu |
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| Affiliation: | National key laboratory of advanced composites, AVIC Composite Technology Center,, |
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| Abstract: | A bromination apparatus was designed and manufactured to accurately control the flow rate of ZrBr4 vapor. Zirconium carbide (ZrC) coatings were deposited on graphite substrate at 1200°C by low pressure chemical vapor deposition from the Zr-Br2-C3H6-H2-Ar system. The effects of gas composition (input C/Zr ratio) on the morphology and growth mechanism of ZrC coatings were investigated. The coating deposition process was controlled by the surface reaction kinetics at the input C/Zr ratio of 1.5, leading to a loose structure. When the input C/Zr ratios were 0.5 and 1, coating growth was dominated by diffusion kinetics, resulting in (200) preferential orientation with a dense columnar structure. Meanwhile, ZrC coating without free carbon was produced at the input C/Zr ratio of 0.5. |
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| Keywords: | ZrC coating ultra-high temperature ceramic microstructure chemical vapor deposition gas composition growth mechanism |
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