| 环栅CMOS/SOI的X射线总剂量辐射效应研究 |
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| 引用本文： | 贺威,张恩霞,钱聪,张正选.环栅CMOS/SOI的X射线总剂量辐射效应研究[J].固体电子学研究与进展,2007,27(3):314-316,334. |
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| 作者姓名： | 贺威 张恩霞 钱聪 张正选 |
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| 作者单位： | 1. 中国科学院上海微系统与信息技术研究所,上海,200050;中国科学院研究生院,北京,100039
2. 中国科学院上海微系统与信息技术研究所,上海,200050 |
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| 摘 要： | 采用硅离子注入工艺对注氧隔离(SIMOX)绝缘体上硅(SOI)材料作出改性,分别在改性材料和标准SIMOXSOI材料上制作部分耗尽环型栅CMOS/SOI器件,并采用10keVX射线对其进行了总剂量辐照试验。实验表明,同样的辐射总剂量条件下,采用改性材料制作的器件与标准SIMOX材料制作的器件相比,阈值电压漂移小得多,亚阈漏电也得到明显改善,说明改性SIMOXSOI材料具有优越的抗总剂量辐射能力。
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| 关 键 词： | 注氧隔离 绝缘体上硅 总剂量辐射效应 |
| 文章编号： | 1000-3819（2007）03-314-03 |
| 修稿时间： | 2005-09-292005-11-24 |
X-ray Total Dose Radiation Effect on CMOS/SOI with Enclose-gate Structure |
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| HE Wei,ZHANG Enxia,QIAN Cong,ZHANG Zhengxuan.X-ray Total Dose Radiation Effect on CMOS/SOI with Enclose-gate Structure[J].Research & Progress of Solid State Electronics,2007,27(3):314-316,334. |
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| Authors: | HE Wei ZHANG Enxia QIAN Cong ZHANG Zhengxuan |
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| Affiliation: | 1. Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, CHN; 2. The Graduate School of the Chinese Academy of Sciences, Beijing, 100039, CHN |
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| Abstract: | Silicon ion implantations was used to improve SIMOX SOI substrate. Partially-depleted CMOS/SOI devices with enclose-gate structure were fabricated on improved SIMOX substrate and standard SIMOX substrate. 10 keV X-ray test was performed and the results demonstrate that the improved CMOS/SOI devices have less threshold voltage shifts and have smaller leakage current after the same total dose irradiation as compared to standard CMOS/SOI devices. |
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| Keywords: | SIMOX SOI total dose radiation effect |
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