| 磁控反应溅射制备的Ta2O5薄膜的光学与介电性能 |
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| 引用本文： | 张幸福,魏爱香,刘毅.磁控反应溅射制备的Ta2O5薄膜的光学与介电性能[J].功能材料,2007,38(A02):878-880. |
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| 作者姓名： | 张幸福 魏爱香 刘毅 |
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| 作者单位： | [1]广东工业大学材料与能源学院,广东广州510006 [2]深圳大学物理科学学院,广东深圳518060 |
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| 基金项目： | 广东工业大学人才引进基金资助项目（052005）. |
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| 摘 要： | 采用直流磁控反应溅射技术，在不同的Ar/O2比条件下制备了系列Ta2O5薄膜样品，采用紫外．可见光透射光谱和椭偏光谱测试分析技术，研究了Ta2O5薄膜在可见光范围内的透射率、折射率和消光系数；同时还采用HP 4192A阻抗分析仪测试分析了样品在500Hz～13MHz频段的介电谱，结果表明在300～700nm的可见光波长范围内，氧化钽薄膜的消光系数k→0，折射率＞2．0，透射率大约80％。500Hz下的低频介电常数5的典型值为20.1。损耗角正切tgδ为19.9。
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| 关 键 词： | 氧化钽薄膜 光学性质 介电谱 |
| 文章编号： | 1001-9731（2007）增刊-0878-03 |
| 修稿时间： | 2007-08-01 |
Optical and dielectric properties of Ta2O5 thin films prepared by magnetron reactive sputtering |
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| ZHANG Xing-fu, WEI Ai-xiang, LIU Yi.Optical and dielectric properties of Ta2O5 thin films prepared by magnetron reactive sputtering[J].Journal of Functional Materials,2007,38(A02):878-880. |
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| Authors: | ZHANG Xing-fu WEI Ai-xiang LIU Yi |
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| Affiliation: | 1.Faculty of Material and Energy, Guangdong University of Technology, Guangzhou 510006, China; 2.School of Physics, Shenzhen University, Shenzhen 518060, China |
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| Abstract: | Ta2O5 thin films was prepared at difference Ar/O2 ratio by dc magnetron sputtering. Optical and dielectric properties of Ta2O5 thin films were studied using ultraviolet-visible spectra, ellipsometry spectroscopic and dielectric spectra. The results revealed that its extinction coefficient k is about 0, refractive index n 2.1 in wavelength range from 300 to 700 nm. The value of dielectrics constant and loss tangent of Ta2O5 thin films is 20.1 and 19.7 at 500 Hz. |
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| Keywords: | Ta2O5 thin films optical characteristics dielectric properties |
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