ZnO上欧姆接触的研究进展

为制备高性能的ZnO基器件如UV光发射器，探测器、场效应晶体管，在ZnO上形成优良的金属电极是十分必要的。回顾了近年来ZnO上制备欧姆接触的新进展，对在n型ZnO上制备欧姆接触的Al，A1/Pt，A1/Au，Ti/Al，Ti，AU，Ti/A1/Pt/Au，Re/Ti/Au等金属化方案的性能与特点，以及影响欧姆接触电阻率和热稳定性的因素，如表面处理和退火等进行了分析与归纳。同时，对P型ZnO上难以获得低接触电阻的原因进行了讨论。文章还简要说明了ZnO上透明欧姆接触的研究现状，指出获得低阻、高导电、高透光和高热稳定性的接触是未来ZnO基光电器件的发展方向。

Recent advances of ohmic contact on ZnO

To fabricate high-performance ZnO-based devices such as UV light emitters/detectors or field effect transistors with acceptable characteristics, the formation of high-quality metal electrodes for ZnO is essential. In this paper, the recent advances of ohmic contacts on ZnO are analyzed and reviewed.The performance and characteristics of various metallization schemes for ohmic contacts on n-type ZnO, including Al, AI/Pt, Al/Au, Ti/Al, Ti/Au, Ti/Al/Pt/Au, Re/Ti/Au etc, and factors to affect the contact resistance and thermal stability of the ohmic contacts, such as surface cleaning and annealing are analyzed and summarized. Besides, the reasons why it is difficult to obtain the low resistance ohmic contact on p-type ZnO are discussed. Furthermore, recent advances of the transparent ohmic contact on ZnO have been reviewed briefly, and the ohmic contact with low resistance, high conductivity, high transmission and good thermal stability is indicated to be the developing trends for ZnO-based photoelectric devices in the future.