AC electrical resistance measurements of PdHx samples versus composition x

Electrical and optical properties of SnO₂ film deposited on indium tin oxide substrate by dip coating have been investigated. The electrical conductivity of the SnO₂ film exhibits the extrinsic conductivity mechanism with two shallow and deep donor levels. The current voltage characteristics of SnO₂ film confirm the presence of space charge limited conduction. The density of states at the Fermi level N(E_F) for the SnO₂ film was determined using current–voltage characteristics and was found to be 1.63 × 10¹⁶ eV⁻¹ m⁻³. The Seebeck coefficient of the SnO₂ at room temperature indicates the n-type electrical conductivity. The Seebeck coefficient suggests that the electrical conductivity of the SnO₂ film varies from n-type conductivity to p-type conductivity with increasing temperature. The optical constants, such refractive index as dielectric constants, were determined from the reflectance, transmittance and absorption spectra. The refractive index dispersion behavior of the SnO₂ film obeys the single oscillator model. The fundamental absorption edge in SnO₂ film is formed by the direct allowed transitions with band gap of 3.40 eV.