硅垂直沟道功率场效应管的微波性能

本文旨在介绍一种新型微波功率器件——Si垂直沟道功率场效应管,它能在0.8GHz输出10W,在1GHz输出8W功率;增益和效率分别为9分贝、48%和8分贝、37%.该新器件具有许多双极晶体管所不具备的优点,例如好的线性度,小的交叉调制失真,高的输入阻抗,负的温度系数,高的抗辐射能力以及无二次击穿.因此器件最适合于高频功率线性放大,并可望用于超高频电视发射和微波多路通讯.本文给出器件的伏安特性、电参数、等效电路和电路设计,并同时给出S参数的估算.在克服了一系列器件的本征缺点之后,理论和实验结果指出,采用共栅组态可在高频时获得更高的增益.

Microwave Performences of A Si Vertical Channel Power FET

This paper describes a new microwave power device——a si vertical channel powerFET that delivers 10W at 0.8GHz and 8W at 1GHz, with gain and drain efficiency being 9dB and 48 percent, 8dB and 37 percent, respectively. The new device has many advantages which are absent in a bipolar transistor, for example, fine linearity, small inter-modulation distortion, high input impendance, negative temperature coefficient, high anti-radiant ability and free-from secondary breakdown. Therefore, the device is best suited to linearlly amplify power at high frequency and is expected to be used for UHF Tele-transmit, microwave multichannel communication.In the paper, the volt-ampere characteristic, the electrical parameters, the equivalent circuit of the device and the design of the circuit are given and estimated S parameter is also reported.After some intrinisic faults of the device have been overcome, the theoretical and experimental results indicate that higer gain is achieved with grounded gate at high frequencies.