Electrical resistivity of transition metal ion doped Mullite

The electrical resistivity of pure mullite (3Al₂O₃.2SiO₂) varies from 10¹³ ohm-cm at room temperature (r.t.) to 10⁴ ohm-cm at 1400 °C. It was observed that by doping mullite with the 3d-type transition metal ions, e.g. Mn, Fe, Cr and Ti, the resistivity of mullite could be reduced to 10¹¹ ohm-cm, i.e. 1/100 that at r.t. and 1/5 that at 1400 °C. The resistivity of doped and undoped mullite decreased by 6–5 orders at about 500–600 °C but 4–3 orders between this temperature and 1400 °C. The 3d orbital electrons, the oxidation states and the concentration of the transition metal ions as well as the sites of mullite lattice occupied by the ions were found responsible for lowering of resistivity of mullite. Evidence of the presence of Mn²⁺, Mn³⁺, Fe³⁺, Cr³⁺ and Ti⁴⁺ ions in mullite had been obtained which entered the octahedral site. The Ti⁴⁺ ion which substituted Al³⁺ ion in the octahedral site of mullite structure appeared to be the most efficient one to reduce the resistivity. This has been confirmed by the results of activation energy of resistivity/band gap energy, Eg which was the lowest for mullite doped with 1·0 wt% Ti⁴⁺ ion. At 1·0 wt% concentration level, these ions lowered the resistivity of mullite to minimum.