Observed behaviour of high-efficiency impatt diodes over a 30% frequency range |
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| Authors: | Huish P.W. |
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| Affiliation: | Post Office Research Centre, Ipswich, UK; |
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| Abstract: | High-power high-efficiency oscillator operation of hi-lo-doped GaAs impatt diodes has been obtained over a frequency range extending from 7.5 to 12 GHz. Arrays of diodes have been used to obtain up to 7.7 W at 22% efficiency. From the measured variation of output power with load resistance, it is concluded that these diodes are operating in the premature collection mode. |
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